Publication | Closed Access
Symmetric Confined Growth of Superstructured Vanadium Dioxide Nanonet with a Regular Geometrical Pattern by a Solution Approach
18
Citations
63
References
2017
Year
NanosheetEngineeringTwo-dimensional MaterialsSemiconductor NanoarchitecturesOptoelectronic DevicesChemistrySemiconductorsSolution ApproachNanoscale ChemistryNanoengineeringRegular Geometrical PatternNanoelectronicsSymmetric Confined GrowthControllable Self-assemblyNanostructure SynthesisNanophotonicsMaterials ScienceNanotechnologyNanomanufacturingPhotonic MaterialsGrowth MethodologyLayered MaterialNanocrystalline MaterialNanomaterialsSelf-assemblySurface ScienceApplied PhysicsNanofabricationNanoarchitectonics
Controllable self-assembly of ordered and regularly patterned semiconductor nanoarchitectures is of great interest in achieving fantastic functionalities and properties of nanomaterials in nanodevices. Here we demonstrate a symmetric confined growth methodology for fabricating a geometrically patterned and well-oriented two-dimensional nanonet by a solution growth. A uniform orthogonal VO2 nanonet composed of single-crystalline nanowalls is self-assembled in a one-step process and exhibits single-crystal-like crystallographic characteristics. It is revealed that the 4-fold symmetric structure of (001) TiO2 determines the orthogonal geometrical pattern of the nanonet; in addition, the interfacial mismatch energy controls the horizontal growth direction and morphology of one-dimensional nanocrystals competing with the surface energy. The unique VO2 nanonet exhibits excellent thermochromic performances due to its self-generated porosity and sluggish phase transition. The initial optical modulation temperature is near room temperature. The solar modulating ability (ΔTsol) is up to 11.82% with the maximum visible light transmittance (Tvis-max) more than 70%. The proposed growth strategy could be adopted in more systems to perform self-assembly of regularly patterned nanoarchitectures with well interconnectivity and preferred orientation, which offers promising opportunities for exploiting potential nanodevices in various applications.
| Year | Citations | |
|---|---|---|
Page 1
Page 1