Field-Effect Transistors Based on van-der-Waals-Grown and Dry-Transferred All-Inorganic Perovskite Ultrathin Platelets

Abstract

Nowadays, the research on perovskite transistors is still in its infancy, despite the fact that perovskite-based solar cells and light-emitting diodes have been widely investigated. Two major hurdles exist before obtaining reliable perovskite-based transistors: the processing difficulty for their sensitivity to polar solvents and unsatisfactory perovskite quality on the transistor platform. Here, for the first time, we report on high-performance all-inorganic perovskite FETs profiting from both van der Waals epitaxial boundary-free ultrathin single crystals and completely dry-processed transfer technique without chemical contaminant. These two crucial factors ensure the unprecedented high-quality perovskite channels. The achieved FET hole mobility and on-off ratio reach 0.32 cm² V^-1 s^-1 and 6.7 × 10³, respectively. Moreover, at the low temperature, the mobility and on-off ratio can be enhanced to be 1.04 cm² V^-1 s^-1 and 1.3 × 10⁴. This work could open the door for the FET applications based on perovskite single crystals.