Journal of Materials Chemistry C · 2017 · 363 citations · 44 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsOptoelectronic DevicesP-n JunctionsPhotodetectorsSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap SemiconductorsGallium Nitride (Gan) MaterialsHeterojunction PhotodetectorsP-n Junction Solar CellsPhotodetectionPhotodetector MaterialsResponsivityUltraviolet Photodetectors
A self-powered ultraviolet photodetector with an extremely high responsivity (54.43 mA W<sup>−1</sup>) was fabricated by constructing p–n junction of GaN/Ga<sub>2</sub>O<sub>3</sub> films.
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