Publication | Closed Access
Construction of GaN/Ga<sub>2</sub>O<sub>3</sub> p–n junction for an extremely high responsivity self-powered UV photodetector
346
Citations
44
References
2017
Year
SemiconductorsPhotonicsElectrical EngineeringElectronic DevicesEngineeringWide-bandgap SemiconductorPhotodetectorsHigh ResponsivityApplied PhysicsGan Power DevicePhotoelectric MeasurementOptoelectronic DevicesSelf-powered Ultraviolet PhotodetectorCategoryiii-v SemiconductorOptoelectronicsP–n Junction
A self-powered ultraviolet photodetector with an extremely high responsivity (54.43 mA W<sup>−1</sup>) was fabricated by constructing p–n junction of GaN/Ga<sub>2</sub>O<sub>3</sub> films.
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