Construction of GaN/Ga<sub>2</sub>O<sub>3</sub> p–n junction for an extremely high responsivity self-powered UV photodetector

Peigang Li, Haoze Shi, Kai Chen, Wei Cui, Yusong Zhi, Shunli Wang, Zhenping Wu, Zhengwei Chen, Weihua Tang

Journal of Materials Chemistry C · 2017 · 363 citations · 44 references

Concepts

Abstract

A self-powered ultraviolet photodetector with an extremely high responsivity (54.43 mA W<sup>−1</sup>) was fabricated by constructing p–n junction of GaN/Ga<sub>2</sub>O<sub>3</sub> films.

References

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