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Interaction between H<sub>2</sub>O, N<sub>2</sub>, CO, NO, NO<sub>2</sub> and N<sub>2</sub>O molecules and a defective WSe<sub>2</sub> monolayer
76
Citations
92
References
2017
Year
In this study, the interaction between gas molecules, including H<sub>2</sub>O, N<sub>2</sub>, CO, NO, NO<sub>2</sub> and N<sub>2</sub>O, and a WSe<sub>2</sub> monolayer containing an Se vacancy (denoted as V<sub>Se</sub>) has been theoretically studied. Theoretical results show that H<sub>2</sub>O and N<sub>2</sub> molecules are highly prone to be physisorbed on the V<sub>Se</sub> surface. The presence of the Se vacancy can significantly enhance the sensing ability of the WSe<sub>2</sub> monolayer toward H<sub>2</sub>O and N<sub>2</sub> molecules. In contrast, CO and NO molecules highly prefer to be molecularly chemisorbed on the V<sub>Se</sub> surface with the non-oxygen atom occupying the Se vacancy site. Furthermore, the exposed O atoms of the molecularly chemisorbed CO or NO can react with additional CO or NO molecules, to produce C-doped or N-doped WSe<sub>2</sub> monolayers. The calculated energies suggest that the filling of the CO or NO molecule and the removal of the exposed O atom are both energetically and dynamically favorable. Electronic structure calculations show that the WSe<sub>2</sub> monolayers are p-doped by the CO and NO molecules, as well as the C and N atoms. However, only the NO molecule and N atom doped WSe<sub>2</sub> monolayers exhibit significantly improved electronic structures compared with V<sub>Se</sub>. The NO<sub>2</sub> and N<sub>2</sub>O molecules will dissociate directly to form an O-doped WSe<sub>2</sub> monolayer, for which the defect levels due to the Se vacancy can be completely removed. The calculated energies suggest that although the dissociation processes for NO<sub>2</sub> and N<sub>2</sub>O molecules are highly exothermic, the N<sub>2</sub>O dissociation may need to operate at an elevated temperature compared with room temperature, due to its large energy barrier of ∼1 eV.
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