Charge trapping and coalescence dynamics in few layer MoS ₂

Abstract

The optoelectronic properties of a material are determined by the processes following light-matter interaction. Here we use femtosecond optical spectroscopy to systematically study photoexcited carrier relaxation in few-layer MoS2flakes as a function of excitation density and sample thickness. We find bimolecular coalescence of charges into indirect excitons as the dominant relaxation process in two- to three-layer flakes while thicker flakes show a much higher density of defects, which efficiently trap charges before they can coalesce.