Publication | Open Access
Tuning analog resistive switching and plasticity in bilayer transition metal oxide based memristive synapses
29
Citations
49
References
2017
Year
EngineeringMemristive SynapsesChemistryPhase Change MemoryAnalog Resistive SwitchingWeight StatesNanoelectronicsMemory DeviceBiophysicsMaterials ScienceElectrical EngineeringNanotechnologyOxide ElectronicsBilayer Transition MetalMicroelectronicsTransition Metal ChalcogenidesRich Suboxide PhasesApplied PhysicsSemiconductor Memory
The existence of rich suboxide phases is favorable for increasing the number of weight states in transition metal oxide synapses.
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