Publication | Open Access
Large enhancement of the spin Hall effect in Au by side-jump scattering on Ta impurities
73
Citations
34
References
2017
Year
EngineeringMagnetic ResonanceLarge ShaSpintronic MaterialSpin DynamicSpin PhenomenonMagnetoresistanceMagnetismIntrinsic SheMaterials ScienceMaterials EngineeringPhysicsTa ImpuritiesSpin Hall EffectLarge EnhancementSpintronicsQuantum MagnetismNatural SciencesApplied PhysicsCondensed Matter Physics
We present measurements of the spin Hall effect (SHE) in AuW and AuTa alloys for a large range of W or Ta concentrations by combining experiments on lateral spin valves and ferromagnetic-resonance/spin-pumping techniques. The main result is the identification of a large enhancement of the spin Hall angle (SHA) by the side-jump mechanism on Ta impurities, with a SHA as high as $+0.5$ (i.e., $50%$) for about 10% of Ta. In contrast, the SHA in AuW does not exceed $+0.15$ and can be explained by intrinsic SHE of the alloy without significant extrinsic contribution from skew or side-jump scattering by W impurities. The AuTa alloys, as they combine a very large SHA with a moderate resistivity (smaller than $85\phantom{\rule{0.28em}{0ex}}\ensuremath{\mu}\mathrm{\ensuremath{\Omega}}\phantom{\rule{0.16em}{0ex}}\text{cm}$), are promising for spintronic devices exploiting the SHE.
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