Effect of KF absorber treatment on the functionality of different transparent conductive oxide layers in CIGSe solar cells

Abstract

Abstract This contribution studies the impact of the KF‐induced Cu(In,Ga)Se 2 (CIGSe) absorber modification on the suitability of different transparent conductive oxide (TCO) layers in solar cells. The TCO material was varied between ZnO:Al (AZO), ZnO:B (BZO), and In 2 O 3 :H (IOH). It is shown that the thermal stress needed for optimized TCO properties can establish a transport barrier for charge carriers, which results in severe losses in fill factor ( FF ) for temperatures >150°C. The FF losses are accompanied by a reduction in open circuit voltage ( V oc ) that might originate from a decreased apparent doping density ( N d,app ) after annealing. Thermally activated redistributions of K and Na in the vicinity of the CdS/(Cu,K)‐In‐Se interface are suggested to be the reason for the observed degradation in solar cell performance. The highest efficiency was measured for a solar cell where the absorber surface modification was removed and a BZO TCO layer was deposited at a temperature of 165°C. The presented results highlight the importance of well‐designed TCO and buffer layer processes for CIGSe solar cells when a KF post deposition treatment (KF‐PDT) was applied.