Isolation and Characterization of Few-Layer Manganese Thiophosphite

Abstract

This work reports an experimental study on an antiferromagnetic honeycomb lattice of MnPS₃ that couples the valley degree of freedom to a macroscopic antiferromagnetic order. The crystal structure of MnPS₃ is identified by high-resolution scanning transmission electron microscopy. Layer-dependent angle-resolved polarized Raman fingerprints of the MnPS₃ crystal are obtained, and the Raman peak at 383 cm^-1 exhibits 100% polarity. Temperature dependences of anisotropic magnetic susceptibility of the MnPS₃ crystal are measured in a superconducting quantum interference device. Anisotropic behaviors of the magnetic moment are explored on the basis of the mean field approximation model. Ambipolar electronic conducting channels in MnPS₃ are realized by the liquid gating technique. The conducting channel of MnPS₃ offers a platform for exploring the spin/valleytronics and magnetic orders in 2D limitation.