IEEE Microwave and Wireless Components Letters · 2017 · 69 citations · 8 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesImpedance MatchingImpedance Matching CircuitsMicrowave Integrated CircuitsMicrowave Semiconductor DevicesPower AmplifiersRadio-frequency Integrated CircuitsClass F AmplifiersClass F Power AmplifiersDielectric Resonator FiltersDielectric ResonatorsHigh-efficiency Power AmplifiersImpedance TransformationImpedance ZerosRadio Frequency Power Amplifiers
In this letter, a high-efficiency filter-integrated class-F power amplifier (PA) is presented. High-Q-factor dielectric resonator (DR) filter is employed as the output matching network of the class-F PA. Theoretical analysis is carried out to guide the impedance transformation from 50 Ω to that desired by the transistor at the operating frequency and the harmonic ones. Two transmission zeros are generated by the DR filter for realizing good skirt selectivity. Besides, metal cavity of the DR filter acts as heat sink for the transistor. For demonstration, a filter-integrated PA operating at 1.88 GHz is implemented. Comparison is made to show the advantages of this letter.
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