ACS Applied Materials & Interfaces · 2017 · 83 citations · 38 references
Bismuth-telluride-based solid solutions are the unique thermoelectric (TE) materials near room temperature. Various approaches have been applied to enhance the thermoelectric performance, and much progress has been made in their p-type materials. However, for the n-type counterparts, little breakthrough has been obtained. We herein report on enhancing thermoelectric performance of n-type bismuth-telluride-based alloys by nonstoichiometry to mediate the point defects, combined with one-time hot deformation. The improved power factor of 3.3 × 10<sup>-3</sup> W m<sup>-1</sup> K<sup>-2</sup> and reduced lattice thermal conductivity contribute to a high figure-of-merit, zT, of 1.2 at 450 K for n-type Bi<sub>2</sub>Te<sub>2.3</sub>Se<sub>0.69</sub> alloys with Se deficiency. The high zT is comparable to that of Bi<sub>2</sub>Te<sub>2.3</sub>Se<sub>0.7</sub> hot deformed three times, which is a practically complicated process. The results demonstrate that nonstoichiometry can be an effective and simple strategy in mediating intrinsic point defects and enhancing the thermoelectric performance of bismuth-telluride-based alloys.
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High-Thermoelectric Performance of Nanostructured Bismuth Antimony Telluride Bulk Alloys
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