How to change the landscape of power electronics with wide bandgap power devices

Abstract

Wide bandgap material based power electronics devices including Silicon Carbide MOSFETs, JFETs, and Gallium Nitride HEMTs are poised to change the landscape of the power electronics industry with their superior high temperature capability, low switching loss and low conduction loss. This paper first provides an overview of the development of WBG devices and their applications, then focuses on how WBG devices can be utilized to change the landscape of power electronics industry by achieving higher power density, higher manufacturability, and higher system stability with high bandwidth. Three examples are introduced. Motivations, challenges, technical approaches and current state of developments are presented.