Stimulating 600–650 nm Wavelength Optical Emission in Monolithically Integrated Silicon LEDs Through Controlled Injection-Avalanche and Carrier Density Balancing Technology

Abstract

600-650 nm wavelengths optical emission have been stimulated in two junction monolithically integrated circuit p+np+ Injection-avalanche silicon light emitting devices. This has been achieved after extensive modeling of potential light emitting mechanisms that could stimulate light emission at these wavelengths. Substantial evidence has been achieved that the optical emissions occur through short range phonon assisted inter-band transitions when low energy holes recombine with energetic electrons in a high impurity/ defect density environment. In particular, it is shown that the emission intensity depends on the balancing of densities of the energetic electrons and low energy holes in this environment. The devices are of micron dimension and operate at 8-10V, 10μA-10 mA regimes. Some of the emission spot sizes are submicron. Emission intensities are typically 70nW/μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> / mA. The observed effect may find several applications in futuristic on-chip electro-optic applications. A third control contact terminal offers modulation possibilities.