Improved performance of transparent-conducting AZO/Cu/AZO multilayer thin films by inserting a metal Ti layer for flexible electronics

Abstract

In order to improve the performance of transparent conductive Al-doped ZnO (AZO)/Cu/Al-doped ZnO multilayer thin films, multilayer thin films of titanium-embedded AZO/Cu/AZO structures have been designed and deposited onto flexible polycarbonate substrates to develop an indium-free transparent flexible electrode. The effect of Ti layer on the structural, optical, and electrical properties of multilayer thin films was investigated. The experiments reveal that the AZO/Ti/Cu/AZO fabricated in argon-oxygen mixtures has the best performance (commutation quality factor of 422.0): resistivity of 3.85×10^-5 Ω·cm, sheet resistance of 4.31 Ω/sq, carrier concentration of 1.65×10²² cm^-3, mobility of 9.87 cm²/Vs, and acceptable luminous transmittance of above 82% in the visible range.