A novel hybrid power module with dual side-gate HiGT and SiC-SBD

Abstract

In this paper, a novel hybrid power module using a new combination of dual side-gate HiGTs (high-conductivity IGBT) and SiC-SBDs is proposed. This combination achieves drastic switching loss reductions at a turn-off loss of -43%, a turn-on loss of -71%, and a reverse recovery loss of -98% compared with a conventional combination of trench gate HiGTs and U-SFDs (ultra soft & fast recovery diode). As a result, the proposed DuSH module (dual side-gate HiGT hybrid module) has an extremely low inverter loss of -50%, similar to SiC-MOSFETs.