A novel contact field plate application in drain-extended-MOSFET transistors

Abstract

A new kind of field plate as contact field plate is fabricated for hot carrier injection improvement, significant decrease in the specified on resistance degradation is observed without substantially affecting the breakdown voltage of devices. Charge pumping method and simulation are carried out to study the degradation mechanism. Our results clearly show that the application of contact field plate can improve the device robustness in terms of hot carrier injection.