A new SiC diode with significantly reduced threshold voltage

Abstract

In this paper we introduce a new generation of silicon carbide (SiC) Schottky diodes with reduced threshold voltage. A detailed comparison with Infineon's 5 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sup> generation of SiC diodes (G5) is done. With a Mo-based Schottky metal system, the new generation of diodes (G6) was designed in such a way that the increased reverse power loss is more than balanced by the efficiency gained by the low threshold voltage. Therefore, in spite of a higher reverse current, due to a lower Schottky barrier, it is shown that the efficiency of G6 is higher and the ohmic losses are reduced in comparison with G5 over a wide load range. G6 also demonstrates similar surge current capabilities as G5 and high ruggedness of the Schottky barrier.