Tuning the transport behavior of centimeter-scale WTe2 ultrathin films fabricated by pulsed laser deposition

Abstract

We report on an avenue to obtain the centimeter-scale, uniform, and high-quality WTe2 ultrathin films by a pulsed laser deposition technique and the post-annealing under the tellurium (Te) vapor. The WTe2 ultrathin films showed the typical metallic behavior when Te vacancies were mostly eliminated. Magnetoresistance measurements showed that WTe2 ultrathin films underwent the competition between weak localization and weak antilocalization that could be modulated by the amount of Te vacancies. Our study may open an avenue to improve the charge transport of WTe2 for its two-dimensional device applications.