2017 · 30 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesIii-v SemiconductorsIntegrated Circuit DesignSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBreakdown VoltagePower MosfetsSilicon CarbideSilicon Carbide (Sic) MaterialsSilicon Carbide Power DevicesSilicon Carbide Power ElectronicsSurgeSwitching Loss Reduction
An approach to implement electrically robust MOSFETs in a functioning half-bridge will be investigated. For the first time, reverse conducting 3.3kV SiC MOSFETs have been fabricated with dilferent cell pitches from 14μm (p1.0) to 26μm (pl.8) that are able to withstand short circuit pulse of up to 10μs and a 9ms surge current event up to 15x the nominal current. LinPak half-bridge modules have been fabricated showing reduction of the switching loss by more than 90% compared to a silicon IGBT/diode half bridge.
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