Optics Express · 2017 · 34 citations · 18 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesInfrared DetectorsOptoelectronic DevicesPhotodetectorsQuantum DotsSemiconductor DetectorsSemiconductor PhysicsQuantum Dot DevicesQuantum Dot PhotodetectorsResidual StrainResponsivitySilicon Infrared DetectorsSilicon PhotodetectorsWafer-to-wafer BondingX-ray Diffraction Analysis
We report the fabrication of quantum dot infrared photodetectors (QDIPs) on silicon (Si) substrates by means of metal wafer bonding and an epitaxial lift-off process. According to the photoluminescence (PL) and x-ray diffraction measurements, the QDIP layer was transferred onto the Si substrate without degradation of the crystal quality or residual strain. In addition, from the PL results, we found that an optical cavity was formed because Pt/Au of the bonding material was served as the back mirror and the facet of the GaAs/air was served as the front mirror. The device performance capabilities were directly compared and peak responsivity was enhanced by nearly twofold from 0.038 A/W to 0.067 A/W.
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Multiphoton plasmon-resonance microscopy
Dvir Yelin, Dan Oron, Stephan Y. Thiberge et al. · Optics Express · 2003 · 233 citations · Full text
Subhananda Chakrabarti, Adrienne D. Stiff‐Roberts, P. Bhattacharya et al. · IEEE Photonics Technology Letters · 2004 · 165 citations