Iron Intercalation in Covalent–Organic Frameworks: A Promising Approach for Semiconductors

Abstract

Covalent–organic frameworks (COFs) are intriguing platforms for designing functional molecular materials. Here, we present a computational study based on van der Waals dispersion-corrected hybrid density functional theory (UB3LYP-D2, i.e., DFT-D) to design boroxine-linked and triazine-linked COFs intercalated with Fe. Keeping the original P –6 m 2 symmetry of the pristine COF (COF-Fe-0), we have computationally designed seven new COFs by intercalating Fe atoms between two organic layers. The equilibrium structures and electronic properties of both the pristine and Fe-intercalated COF materials are investigated here. We predict that the electronic properties of COFs can be fine-tuned by adding Fe atoms between two organic layers in their structures. Our calculations show that these new intercalated-COFs are promising semiconductors. The effect of Fe atoms on the electronic band structures and density of states (DOSs) has also been investigated using the aforementioned DFT-D method. The contribution of the d-subshell electron density of the Fe atoms plays an important role in improving the semiconductor properties of these new materials. These intercalated-COFs provide a new strategy to create semiconducting materials within a rigid porous network in a highly controlled and predictable manner.