Computational Synthesis of MoS₂ Layers by Reactive Molecular Dynamics Simulations: Initial Sulfidation of MoO₃ Surfaces

Abstract

Transition metal dichalcogenides (TMDC) like MoS₂ are promising candidates for next-generation electric and optoelectronic devices. These TMDC monolayers are typically synthesized by chemical vapor deposition (CVD). However, despite significant amount of empirical work on this CVD growth of monolayered crystals, neither experiment nor theory has been able to decipher mechanisms of selection rules for different growth scenarios, or make predictions of optimized environmental parameters and growth factors. Here, we present an atomic-scale mechanistic analysis of the initial sulfidation process on MoO₃ surfaces using first-principles-informed ReaxFF reactive molecular dynamics (RMD) simulations. We identify a three-step reaction process associated with synthesis of the MoS₂ samples from MoO₃ and S₂ precursors: O₂ evolution and self-reduction of the MoO₃ surface; SO/SO₂ formation and S₂-assisted reduction; and sulfidation of the reduced surface and Mo-S bond formation. These atomic processes occurring during early stage MoS₂ synthesis, which are consistent with experimental observations and existing theoretical literature, provide valuable input for guided rational synthesis of MoS₂ and other TMDC crystals by the CVD process.