Publication | Closed Access
Band alignment between PEALD-AlNO and AlGaN/GaN determined by angle-resolved X-ray photoelectron spectroscopy
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Citations
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References
2017
Year
Materials ScienceWide-bandgap SemiconductorAluminium NitrideEngineeringPhysicsApplied PhysicsAluminum Gallium NitrideGan Power DeviceBand AlignmentCategoryiii-v Semiconductor
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