All-sputtered, flexible, bottom-gate IGZO/Al₂O₃ bi-layer thin film transistors on PEN fabricated by a fully room temperature process

Abstract

In this work, an innovative all-sputtered bottom-gate thin film transistor (TFT) using an amorphous InGaZnO (IGZO)/Al₂O₃ bi-layer channel was fabricated by fully room temperature processes on a flexible PEN substrate.