3.3 kV 4H-SiC JBS diodes with single-zone JTE termination - Concepedia

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3.3 kV 4H-SiC JBS diodes with single-zone JTE termination

15

Citations

16

References

2017

Year

Yan Pan, Liang Tian, Hao Wu, Yongping Li, Fei Yang

Microelectronic Engineering

Electrical EngineeringEngineeringHigh Voltage EngineeringPower DevicePower Semiconductor DevicePower ElectronicsSingle-zone Jte Termination

References

	Year	Citations

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