Publication | Closed Access
Spatial variation of lattice plane bending of 4H-SiC substrates
20
Citations
15
References
2017
Year
Materials EngineeringMaterials ScienceSurface CharacterizationEngineeringNanoelectronicsLattice Plane BendingSurface ScienceApplied PhysicsBasal Plane BendingSurface AnalysisCarbideHigh-resolution X-ray DiffractometrySemiconductor Device FabricationStructural CeramicOff-axis 4H-sic SubstratesMicrostructure
Basal plane bending of on- and off-axis 4H-SiC substrates was measured by high-resolution X-ray diffractometry (HRXRD).
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