Direct Growth of High Mobility and Low‐Noise Lateral MoS₂–Graphene Heterostructure Electronics

Abstract

Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all-2D electronic circuitry. This study employs seed-free consecutive chemical vapor deposition processes to synthesize high-quality lateral MoS₂ -graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS₂ -graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS₂ -metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS₂ -graphene in-plane heterostructures are promising materials for the scale-up of all-2D circuitry with superlative electrical performance.