Ultrafast Growth of High‐Quality Monolayer WSe₂ on Au

Abstract

The ultrafast growth of high-quality uniform monolayer WSe₂ is reported with a growth rate of ≈26 µm s^-1 by chemical vapor deposition on reusable Au substrate, which is ≈2-3 orders of magnitude faster than those of most 2D transition metal dichalcogenides grown on nonmetal substrates. Such ultrafast growth allows for the fabrication of millimeter-size single-crystal WSe₂ domains in ≈30 s and large-area continuous films in ≈60 s. Importantly, the ultrafast grown WSe₂ shows excellent crystal quality and extraordinary electrical performance comparable to those of the mechanically exfoliated samples, with a high mobility up to ≈143 cm² V^-1 s^-1 and ON/OFF ratio up to 9 × 10⁶ at room temperature. Density functional theory calculations reveal that the ultrafast growth of WSe₂ is due to the small energy barriers and exothermic characteristic for the diffusion and attachment of W and Se on the edges of WSe₂ on Au substrate.