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Wavelength-Dependent Ultrafast Charge Carrier Separation in the WO<sub>3</sub>/BiVO<sub>4</sub> Coupled System

122

Citations

23

References

2017

Year

Abstract

Due to its ~2.4 eV band gap, BiVO&lt;sub&gt;4&lt;/sub&gt; is a very promising photoanode material for harvesting the blue portion of the solar light for photoelectrochemical (PEC) water splitting applications. In WO&lt;sub&gt;3&lt;/sub&gt;/BiVO&lt;sub&gt;4&lt;/sub&gt; heterojunction films, the electrons photoexcited in BiVO&lt;sub&gt;4&lt;/sub&gt; are injected into WO&lt;sub&gt;3&lt;/sub&gt;, overcoming the lower charge carriers’ diffusion properties limiting the PEC performance of BiVO&lt;sub&gt;4&lt;/sub&gt; photoanodes. Here, we investigate by ultrafast transient absorption spectroscopy the charge carrier interactions occurring at the interface between the two oxides in heterojunction systems to directly unveil their wavelength dependence. Under selective BiVO&lt;sub&gt;4&lt;/sub&gt; excitation, a favorable electron transfer from photoexcited BiVO&lt;sub&gt;4&lt;/sub&gt; to WO&lt;sub&gt;3&lt;/sub&gt; occurs immediately after excitation and leads to an increase of the trapped holes’ lifetime in BiVO4. However, a recombination channel opens when both oxides are simultaneously excited, evidenced by a shorter lifetime of trapped holes in BiVO&lt;sub&gt;4&lt;/sub&gt;. As a result, PEC measurements reveal the implication of these wavelength-dependent ultrafast interactions on the performances of the WO&lt;sub&gt;3&lt;/sub&gt;/BiVO&lt;sub&gt;4&lt;/sub&gt; heterojunction.

References

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