Understanding and Eliminating Hysteresis for Highly Efficient Planar Perovskite Solar Cells

Abstract

Through detailed device characterization using cross‐sectional Kelvin probe force microscopy (KPFM) and trap density of states measurements, we identify that the J – V hysteresis seen in planar organic–inorganic hybrid perovskite solar cells (PVSCs) using SnO 2 electron selective layers (ESLs) synthesized by low‐temperature plasma‐enhanced atomic‐layer deposition (PEALD) method is mainly caused by the imbalanced charge transportation between the ESL/perovskite and the hole selective layer/perovskite interfaces. We find that this charge transportation imbalance is originated from the poor electrical conductivity of the low‐temperature PEALD SnO 2 ESL. We further discover that a facile low‐temperature thermal annealing of SnO 2 ESLs can effectively improve the electrical mobility of low‐temperature PEALD SnO 2 ESLs and consequently significantly reduce or even eliminate the J – V hysteresis. With the reduction of J – V hysteresis and optimization of deposition process, planar PVSCs with stabilized output powers up to 20.3% are achieved. The results of this study provide insights for further enhancing the efficiency of planar PVSCs.