1060 nm single‐mode vertical‐cavity surface‐emitting laser operating at 50 Gbit/s data rate

Ewa Simpanen, Johan Gustavsson, Emanuel P. Haglund, Emanuel P. Haglund, Anders Larsson, Wayne V. Sorin, Sagi Mathai, Mengxi Tan

Electronics Letters · 2017 · 18 citations · 8 references

Concepts

Abstract

An energy efficient 1060 nm GaAs‐based oxide‐confined vertical‐cavity surface‐emitting laser designed for high‐speed modulation and single‐mode emission has been developed. A record data rate of 50 Gbit/s at an energy dissipation of 100 fJ/bit is demonstrated for a device with >50 dB side‐mode‐suppression and 0.2 mA threshold current, making this laser a promising light source for long‐reach optical interconnects.

References

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