Publication | Open Access
Effect of Precursor Concentration on Structural Optical and Electrical Properties of NiO Thin Films Prepared by Spray Pyrolysis
55
Citations
61
References
2017
Year
Materials SciencePrecursor ConcentrationOptical MaterialsEngineeringMaterial AnalysisOxide ElectronicsSurface ScienceApplied PhysicsX-ray DiffractionStructural OpticalPulsed Laser DepositionUndoped Nickel OxideThin Film Process TechnologyThin FilmsSpray PyrolysisChemical Vapor DepositionThin Film Processing
Undoped nickel oxide (NiO) thin films were deposited on 500°C heated glass substrates using spray pyrolysis method at (0.015–0.1 M) range of precursor. The latter was obtained by decomposition of nickel nitrate hexahydrate in double distilled water. Effect of precursor concentration on structural, optical, and electrical properties of NiO thin films was investigated. X-ray diffraction (XRD) shows the formation of NiO under cubic structure with single diffraction peak along (111) plane at<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="M1"><mml:mn fontstyle="italic">2</mml:mn><mml:mi>θ</mml:mi><mml:mo>=</mml:mo><mml:msup><mml:mrow><mml:mn fontstyle="italic">37.24</mml:mn></mml:mrow><mml:mrow><mml:mo>°</mml:mo></mml:mrow></mml:msup></mml:math>. When precursor concentration reaches 0.1 M, an increment in NiO crystallite size over 37.04 nm was obtained indicating the product nano structure. SEM images reveal that beyond 0.04 M as precursor concentration the substrate becomes completely covered with NiO and thin films exhibit formation of nano agglomerations at the top of the sample surface. Ni-O bonds vibrations modes in the product of films were confirmed by FT-IR analysis. Transparency of the films ranged from 57 to 88% and band gap energy of the films decreases from 3.68 to 3.60 eV with increasing precursor concentration. Electrical properties of the elaborated NiO thin films were correlated to the precursor concentration.
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