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A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications
163
Citations
46
References
2017
Year
Wide-bandgap SemiconductorEngineeringGese/sns HeterobilayerOptoelectronic DevicesPlasmon-enhanced PhotovoltaicsChemistryPhotovoltaicsSemiconductor NanostructuresIi-vi SemiconductorElectronic DevicesOptical PropertiesBroad SpectrumType-ii Band AlignmentType-ii Gese/sns HeterobilayerCompound SemiconductorElectrical EngineeringSuperior Optical AbsorptionOptoelectronic MaterialsSemiconductor MaterialElectronic MaterialsApplied PhysicsOptoelectronicsSolar Cell Materials
Type-II band alignment, a suitable direct gap (1.519 eV), superior optical-absorption (∼10<sup>5</sup>) and a broad spectrum make the GeSe/SnS heterobilayer a promising material for photovoltaic applications.
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