Low‐Temperature Atomic Layer Deposition of MoS₂ Films

Abstract

Wet chemical screening reveals the very high reactivity of Mo(NMe₂ )₄ with H₂ S for the low-temperature synthesis of MoS₂ . This observation motivated an investigation of Mo(NMe₂ )₄ as a volatile precursor for the atomic layer deposition (ALD) of MoS₂ thin films. Herein we report that Mo(NMe₂ )₄ enables MoS₂ film growth at record low temperatures-as low as 60 °C. The as-deposited films are amorphous but can be readily crystallized by annealing. Importantly, the low ALD growth temperature is compatible with photolithographic and lift-off patterning for the straightforward fabrication of diverse device structures.