Tuning Contact Barrier Height between Metals and MoS₂ Monolayer through Interface Engineering

Abstract

Creating an electrical contact to 2D semiconductors with low resistance is a challenging task. In this study, by combining photoemission spectroscopy measurements and first‐principles calculations, it has been shown that a significant interfacial reaction occurring between the high work function metal Ni and an MoS 2 monolayer leads to a metallic MoS 2 monolayer and a high contact barrier height. By introducing an additional MoS 2 layer as a buffer layer, both of these effects can be remedied, resulting in the desired semiconducting channel layer and a reduced contact barrier height. Further applying this strategy to the low work function metal Ti interfaced with an MoS 2 monolayer, the contact barrier height can be decreased to about 0.29 eV. The results of this study provide an improved understanding of the interfacial interaction between metals and 2D semiconductors. In addition, a technically less demanding way to tune the contact barrier height is demonstrated.