Annealing effects on CsPbI₃-based planar heterojunction perovskite solar cells formed by vacuum deposition method

Abstract

Cesium iodide (CsI) is attracting attention as a substitute for organic materials such as CH3NH3I. In this work, we fabricated sequential-vacuum-deposited planar heterojunction (PHJ) cesium lead iodide (CsPbI3) perovskite solar cells with enhanced efficiencies by varying the annealing time (0.5, 1, 5, and 10 min). The effect of performance enhancement was investigated as a function of varying annealing time at 350 °C employing a hot plate. The best-performing device was obtained with an annealing time of 1 min, delivered photocurrent density (JSC) of 12.06 mA/cm2, voltage (VOC) of 0.71 V, and fill factor (FF) of 0.67, leading to a power conversion efficiency (PCE) of 5.71% at standard AM 1.5G solar illumination.