Correlation of size and oxygen bonding at the interface of Si nanocrystal in Si–SiO₂ nanocomposite: A Raman mapping study

Abstract

Raman spectroscopy/mapping is used to investigate the variation of Si phonon wavenumbers, i.e., lower wavenumber (LW ~ 495–510 cm −1 ) and higher wavenumber (HW ~ 515–519 cm −1 ) phonons, observed in Si–SiO 2 multilayer nanocomposite (NCp) grown using pulsed laser deposition. Sensitivity of Raman spectroscopy as a local probe to surface/interface is effectively used to show that LW and HW phonons originate at surface (Si–SiO 2 interface) and core of Si nanocrystals, respectively. The consistent picture of this understanding is developed using Raman spectroscopy monitored laser heating/annealing and cooling experiment at the site of the desired wavenumber, chosen with the help of Raman mapping. Raman spectra calculations for Si 41 cluster with oxygen and hydrogen termination show strong mode at 512 cm −1 for oxygen terminated cluster corresponding to the vibration of surface Si atoms. This supports our attribution of LW phonons to be originating at the Si–SiO 2 surface/interface. These results along with XPS show that nature of interface (oxygen bonding) in turn depends on the size of nanocrystals and LW phonons originate at the surface of smaller Si nanocrystals. The understanding developed can conclude the ongoing debate on large variation in Si phonon wavenumbers of Si–SiO 2 NCps in the literature. Copyright © 2015 John Wiley & Sons, Ltd.