Nanostructural optimization of silicon/PEDOT:PSS hybrid solar cells for performance improvement

Abstract

In this paper, an inverted silicon (Si) nanopyramid (iSiNP) surface structure with low aspect ratio and remarkable antireflection is developed through sequential treatments of NaOH and HF/CH<inf>3</inf>COOH/HNO<inf>3</inf> solutions to Si nanowire (SiNW)-textured Si wafers, which are prepared by traditional electroless chemical etching. The iSiNP/PEDOT:PSS hybrid solar cell is fabricated through conformally spin-coating poly(3.4-ethylene dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) onto the iSiNPs; it exhibits enhanced device performance owing to the improved junction and contact quality as compared to the SiNW/PEDOT:PSS counterpart. A power conversion efficiency (PCE) of 9.6% mainly contributed from an increased fill factor (FF) of 0.61 and improved open circuit voltage (V <inf>oc</inf>) of 0.53 V is delivered by the iSiNP/PEDOT:PSS solar cell. As a comparison, the SiNW/PEDOT:PSS structure delivers a 7.1% PCE with a FF of 0.45 and V <inf>oc</inf> of 0.46 V. Considering the submicro-scale characteristic dimensions, iSiNPs are expected to be applicable to highly efficient thin film Si/PEDOT:PSS hybrid solar cells.<br/> © 2017 IOP Publishing Ltd.