Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films

Abstract

O molecules from the chemically modified surfaces. Fermi level pinning, and alteration in the surface polarity with substantial changes in the electron affinities were also perceived. The temperature dependent current-voltage analysis of the nanostructured surfaces displayed enhancement in current conduction. The in-depth analysis demonstrates that the chemically etched samples could potentially be utilized as templates in the design/growth of III-nitride based high performance devices.