Experimental verification of TCAD simulation for high-performance SiGe HBTs

Abstract

The ability of state-of-the-art TCAD simulation to predict the performance of SiGe HBTs with advanced vertical doping profiles is evaluated by a comparison of simulation and experiment. Doping profiles of HBTs with f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> > 400GHz were derived from a combination of various experimental techniques and used as input for two-dimensional device simulation with the hydrodynamic transport model. While the present simulations agree with measured DC characteristics, they underestimate measured peak f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> values by 11 %.