Simulation of perovskite solar cell with P₃HT hole-transporting materials

Abstract

The performance (PCE) of perovskite solar cells was investigated using the simulation programs solar cell capacitance simulator and analysis of microelectronic and photonic structures-1-D. This paper entailed a study of the effects of hole density concentrations, defect density, thickness of perovskite active layers, P3HT hole-transporting material (HTM) layer thickness, hole mobility, working temperature, and varying illumination intensity on the PCE, of open-circuit voltage, fill factor, short-circuit current density, and the simulation of J−V curves solar cells for varying illumination intensity. Then, J−V characteristics and quantum efficiency were calculated for different thickness absorbers and HTM layers. The simulation results showed an optimal value for the absorber layer thickness and for the HTM layer. Also, a rise in the temperature had a strong effect on the perovskite solar cells PCE. These simulation results serve to provide several important guidelines for feasible fabrication of higher-PCE perovskite solar cells.