Void evolution and porosity under arsenic ion irradiation in GaAs<sub>1−<i>x</i></sub>Sb<sub><i>x</i></sub>alloys - Concepedia

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Void evolution and porosity under arsenic ion irradiation in GaAs<sub>1−<i>x</i></sub>Sb<sub><i>x</i></sub>alloys

12

Citations

42

References

2017

Year

Huda Alkhaldi, P. Kluth, Felipe Kremer, Mykhaylo Lysevych, L Li, M. C. Ridgway, J. S. Williams

Journal of Physics D Applied Physics

SemiconductorsIon ImplantationEngineeringPhysicsApplied PhysicsCondensed Matter PhysicsSemiconductor MaterialCompound SemiconductorVoid Evolution

References

	Year	Citations

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