Rapid laser-induced photochemical conversion of sol–gel precursors to In<sub>2</sub>O<sub>3</sub> layers and their application in thin-film transistors - Concepedia

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Rapid laser-induced photochemical conversion of sol–gel precursors to In<sub>2</sub>O<sub>3</sub> layers and their application in thin-film transistors

DOI Full Paper Access

36

Citations

26

References

2017

Year

Spilios Dellis, Ivan Isakov, N. Kalfagiannis, Kornelius Tetzner, Thomas D. Anthopoulos, Demosthenes C. Koutsogeorgis

Journal of Materials Chemistry C

Abstract

We report the development of indium oxide (In<sub>2</sub>O<sub>3</sub>) transistors <italic>via</italic> a single step laser-induced photochemical conversion process of a sol–gel metal oxide precursor.

References

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