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Publication | Open Access

Dismantling the “Red Wall” of Colloidal Perovskites: Highly Luminescent Formamidinium and Formamidinium–Cesium Lead Iodide Nanocrystals

515

Citations

165

References

2017

Year

Abstract

Colloidal nanocrystals (NCs) of APbX<sub>3</sub>-type lead halide perovskites [A = Cs<sup>+</sup>, CH<sub>3</sub>NH<sub>3</sub><sup>+</sup> (methylammonium or MA<sup>+</sup>) or CH(NH<sub>2</sub>)<sub>2</sub><sup>+</sup> (formamidinium or FA<sup>+</sup>); X = Cl<sup>-</sup>, Br<sup>-</sup>, I<sup>-</sup>] have recently emerged as highly versatile photonic sources for applications ranging from simple photoluminescence down-conversion (e.g., for display backlighting) to light-emitting diodes. From the perspective of spectral coverage, a formidable challenge facing the use of these materials is how to obtain stable emissions in the red and infrared spectral regions covered by the iodide-based compositions. So far, red-emissive CsPbI<sub>3</sub> NCs have been shown to suffer from a delayed phase transformation into a nonluminescent, wide-band-gap 1D polymorph, and MAPbI<sub>3</sub> exhibits very limited chemical durability. In this work, we report a facile colloidal synthesis method for obtaining FAPbI<sub>3</sub> and FA-doped CsPbI<sub>3</sub> NCs that are uniform in size (10-15 nm) and nearly cubic in shape and exhibit drastically higher robustness than their MA- or Cs-only cousins with similar sizes and morphologies. Detailed structural analysis indicated that the FAPbI<sub>3</sub> NCs had a cubic crystal structure, while the FA<sub>0.1</sub>Cs<sub>0.9</sub>PbI<sub>3</sub> NCs had a 3D orthorhombic structure that was isostructural to the structure of CsPbBr<sub>3</sub> NCs. Bright photoluminescence (PL) with high quantum yield (QY > 70%) spanning red (690 nm, FA<sub>0.1</sub>Cs<sub>0.9</sub>PbI<sub>3</sub> NCs) and near-infrared (near-IR, ca. 780 nm, FAPbI<sub>3</sub> NCs) regions was sustained for several months or more in both the colloidal state and in films. The peak PL wavelengths can be fine-tuned by using postsynthetic cation- and anion-exchange reactions. Amplified spontaneous emissions with low thresholds of 28 and 7.5 μJ cm<sup>-2</sup> were obtained from the films deposited from FA<sub>0.1</sub>Cs<sub>0.9</sub>PbI<sub>3</sub> and FAPbI<sub>3</sub> NCs, respectively. Furthermore, light-emitting diodes with a high external quantum efficiency of 2.3% were obtained by using FAPbI<sub>3</sub> NCs.

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