Monolayer W<i>_x</i>Mo₁₋<i>_x</i>S₂ Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

Abstract

Monolayer W x Mo 1− x S 2 ‐based field effect transistors are demonstrated for the first time on the monolayer W x Mo 1− x S 2 flake, which is grown by the chemical vapor deposition method under an atmospheric pressure. Detailed material studies using Raman and photoluminescence measurements have been carried out on the as‐grown monolayer W x Mo 1− x S 2 . Electronic band structure of monolayer W x Mo 1− x S 2 has been calculated using first‐principle theory. The thermal stability of monolayer W x Mo 1− x S 2 has been evaluated using Raman‐temperature measurement. Carrier transport study on the fabricated W x Mo 1− x S 2 FETs has been analyzed using temperature‐dependent current measurement, and a field effect mobility of ≈30 cm 2 V −1 s −1 at 300 K is obtained.