Direct Observation of Dual‐Filament Switching Behaviors in Ta₂O₅‐Based Memristors

Abstract

The Forming phenomenon is observed via in situ transmission electron microscopy in the Ag/Ta₂ O₅ /Pt system. The device is switched to a low-resistance state as the dual filament is connected to the electrodes. The results of energy dispersive spectrometer and electron energy loss spectroscopy analyses demonstrate that the filament is composed by a stack of oxygen vacancies and Ag metal.