Publication | Closed Access
Influence of growth temperature on laser molecular beam epitaxy and properties of GaN layers grown on c-plane sapphire
19
Citations
31
References
2017
Year
Materials ScienceGrowth TemperatureEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceMolecular Beam EpitaxyC-plane SapphireEpitaxial GrowthOptoelectronicsGan Layers
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