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Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO<sub>3</sub> films
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Citations
37
References
2017
Year
Chemical EngineeringEpitaxial GrowthEngineeringNanotechnologyOxide ElectronicsSurface ScienceApplied PhysicsSemiconductor MaterialElectronic TransportThin FilmsStrong Charge CompensationMolecular Beam EpitaxyHybrid Mbe ApproachThin Film ProcessingAdsorption-controlled Growth
Adsorption-controlled growth and strong charge compensation accompanied by decreased electron mobility due to cation non-stoichiometry was discovered in epitaxial BaSnO<sub>3</sub> films using a hybrid MBE approach.
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