Multi-domain compact modeling for GeSbTe-based memory and selector devices and simulation for large-scale 3-D cross-point memory arrays

Abstract

A novel compact model is developed by coupling comprehensive physical equations from electrical, thermal and phase-transition domains in order to capture their correlations that exist in GeSeTe (GST) device physics. Several non-ideal effects during GST-based memory cell operations have been studied with particular focus on cell Read/Write margins and reliability issues. Finally, large-scale 3-D cross-point memory array circuits have been simulated with developed physics-based models to further explore the design constraints.