Approaching ballistic transport in monolayer MoS<inf>2</inf> transistors with self-aligned 10 nm top gates

Abstract

We present the first study of 10 nm self-aligned top-gated field-effect transistors (SATFETs) based on monolayer MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> . Using a novel fabrication process, we achieve record saturation current, I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Dsat</sub> > 400 μA/μm, sub-threshold slope down to 80 mV/dec and equivalent oxide thickness (EOT) ≈ 2.5 nm. Combining transistor modeling with careful gate capacitance and contact resistance measurements, we provide the first analysis of diffusive vs. ballistic transport in monolayer MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> FETs. Results indicate the onset of ballistic transport with transmission up to 0.25 at low temperature. We also suggest a feasible route to advance MoS2 transistors further to the ballistic limit.